CM2030(2012) Ver la hoja de datos (PDF) - ON Semiconductor
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CM2030 Datasheet PDF : 11 Pages
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CM2030
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 7)
Symbol
Parameter
Conditions
Min Typ Max Units
CECRT
CEC Rise Time
Measured from 10−90%
26.4
Assumes a signal swing from 0−3.3 V
250 ms
CECFT
CEC Fall Time
Measured from 90−10%
4
Assumes a signal swing from 0−3.3 V
50
ms
VACC
Turn On Threshold of I2C / DDC Accelerator Voltage is 0.3 ±10% X 5 V_Supply
(Note 8)
1.35 1.5 1.65 V
VON(DDC_OUT) Voltage Drop across DDC Level Shifter
LV_SUPPLY = 3.3 V, 3 mA Sink at
DDCIN, DDCOUT < VACC
150 225 mV
VOL(DDC_IN)
Logic Level (ASIC side) when I2C / DDC Logic DDC_OUT = 0.4 V,
Low Applied (I2C Pass−through Compatibility) LV_SUPPLY = 3.3 V, 1.5 kW pullup on
DDC_OUT to 5.0 V (Note 8)
0.3 0.4
V
tr(DDC)
DDC_OUT Line Risetime,
VACC < VDDC_OUT < (5V_Supply − 0.5 V)
DDC_IN floating, LV_SUPPLY = 3.3 V,
1.5 kW pullup on DDC_OUT to 5.0 V,
Bus Capacitance = 1500 pF
1
ms
VF
Diode Forward Voltage
Top Diode
Bottom Diode
IF = 8 mA, TA = 25°C
V
0.6 0.85 0.95
0.6 0.85 0.95
VESD
VESD
VCL
ESD Withstand Voltage (IEC)
ESD Withstand Voltage (HBM)
Channel Clamp Voltage
Positive Transients
Negative Transients
Pins 4, 7, 10, 13, 20, 21, 22, 23, 24, 27, ±8
kV
30, 33, TA = 25°C (Note 8)
Pins 1, 2, 16, 17, 18, 19, 37, 38,
±2
kV
TA = 25°C
TA = 25°C, IPP = 1 A, tP = 8/20 mS
(Note 11)
V
11.0
2.0
RDYN
Dynamic Resistance
Positive Transients
Negative Transients
TA = 25°C, IPP = 1 A, tP = 8/20 mS
Any I/O pin to Ground (Note 11)
W
1.4
0.9
ILEAK
TMDS Channel Leakage Current
TA = 25°C
0.01 1
mA
CIN, TMDS TMDS Channel Input Capacitance
5V_SUPPLY = 5.0 V, Measured at
1 MHz, VBIAS = 2.5 V
0.9 1.2 pF
DCIN, TMDS TMDS Channel Input Capacitance Matching 5V_SUPPLY = 5.0 V, Measured at
1 MHz, VBIAS = 2.5 V (Note 10)
0.05
pF
CMUTUAL
Mutual Capacitance between Signal Pin and 5V_SUPPLY = 0 V,
Adja Cent Signal Pin
Measured at 1 MHz, VBIAS = 2.5 V
0.07
pF
CIN, DDCOUT Level Shifting Input Capacitance, Capacitance 5V_SUPPLY = 0 V,
to GND
Measured at 100 kHz, VBIAS = 2.5 V
10
pF
CIN, CECOUT Level Shifting Input Capacitance, Capacitance 5V_SUPPLY = 0 V,
10
pF
to GND
Measured at 100 kHz, VBIAS = 1.65 V
CIN, HPOUT Level Shifting Input Capacitance, Capacitance 5V_SUPPLY = 0 V,
to GND
Measured at 100 kHz, VBIAS = 2.5 V
10
pF
7. Operating Characteristics are over Standard Operating Conditions unless otherwise specified.
8. Standard IEC61000−4−2, CDISCHARGE = 150 pF, RDISCHARGE = 330 W, 5V_SUPPLY = 5 V, 3.3V_SUPPLY = 3.3 V, LV_SUPPLY = 3.3
V, GND = 0 V.
9. Human Body Model per MIL−STD−883, Method 3015, CDISCHARGE = 100 pF, RDISCHARGE = 1.5 kW, 5V_SUPPLY = 5V, 3.3V_SUP-
PLY = 3.3 V, LV_SUPPLY = 3.3 V, GND = 0 V.
10. Intra−pair matching, each TMDS pair (i.e. D+, D–)
11. These measurements performed with no external capacitor on VP (VP floating)
12. These static measurements do not include AC activity on controlled I/O lines.
13. This measurement does not inclue supply current for the 120 mA current source on the CEC pin.
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