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CM1641

4-Channel Low Capacitance Dual Voltage ESD Protection Array

ON Semiconductor 

CM1641

ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)

SYMBOL PARAMETER

VF

LV Diode Reverse Voltage

(Positive Voltage)

LV Diode Forward Voltage

(Negative Voltage)

ILEAK

LV Channel Leakage Current

CONDITIONS

IF = 10mA; TA= 25°C

IF = 10mA; TA= 25°C

TA= -30°C to 65°C; VIN= 3.3V,

VN=0V

MIN

6.8

–1.05

TYP MAX UNITS

8.2 9.2

V

–0.9 –0.6

V

100 nA

CIN

LV Channel Input Capacitance

At 1 MHz, VN=0V, VIN=1.65V

1.2 1.5

pF

∆CIN

LV Channel Input Capacitance

Matching

ILEAK_HV

CIN_HV

HV Channel Leakage Current

HV Channel Input Capacitance

At 1 MHz, VN=0V, VIN=1.65V

TA=25°C; VCC=11V, VN=0V

At 1 MHz, VN=0V, VIN=2.5V

0.02

pF

0.1 1.0

µA

53

pF

VF_HV

VESD

VCL

RDYN

HV Diode Breakdown Voltage

Positive Voltage

IF = 10mA; TA=25°C

ESD Protection

Peak Discharge Voltage at any

channel input, in system

Contact discharge per

IEC 61000-4-2 standard

TA=25°C

LV Channel Clamp Voltage (Pin 1-3)

Positive Transients

Negative Transients

TA=25°C, IPP = 1A,

tP = 8/20µS

Dynamic Resistance

LV Channel Positive Transients

LV Channel Negative Transients

HV Channel Positive Transients

HV Channel Negative Transients

IPP = 1A, tP = 8/20µS

Any I/O pin to Ground;

14.6

17.7

V

±8 (Pin 1-3)

kV

±15 (Pin 4)

kV

+9.64

V

–1.75

V

0.72

Ω

0.59

Ω

1.20

Ω

0.36

Ω

Note 1: All parameters specified at TA = –40°C to +85°C unless otherwise noted.

Rev.4 | Page 4 of 10 | www.onsemi.com

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