CM1436 Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

CM1436

4- and 8-Channel EMI Filter Arrays with ESD Protection

ON Semiconductor 

CM1436

ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)

SYMBOL PARAMETER

R

Resistance

CONDITIONS

C

Capacitance

At 2.5V DC, 1MHz, 30mV AC

VDIODE

ILEAK

Diode Standoff Voltage

Diode Leakage Current (reverse

bias)

IDIODE = 10µA

VDIODE = 3.3V

VSIG

Signal Voltage

Positive Clamp

Negative Clamp

ILOAD = 10mA

ILOAD = -10mA

VESD In-system ESD Withstand Voltage Note 2

a) Human Body Model, MIL-STD-

883, Method 3015

b) Contact Discharge per IEC

61000-4-2 Level 4

f

C

A

1GHz

Cut-off Frequency

ZSOURCE=50Ω, ZLOAD=50Ω

R = 200Ω, C = 15pF;

Absolute Attenuation @ 1GHz from ZSOURCE = 50Ω, Z LOAD = 50Ω,

0dB Level

DC Bias = 0V; Notes 1

A

Absolute Attenuation @ 800MHz to

800MHz - 6GHz

ZSOURCE = 50Ω, Z LOAD = 50Ω,

6GHz from 0dB Level

DC Bias = 0V; Notes 1 and 3

MIN TYP MAX UNITS

160

200

240

Ω

12

15

18

pF

6.0

V

0.1

1

µA

5.6

6.8

9.0

V

-0.4

-0.8

-1.5

V

±30

kV

±15

kV

100

MHz

35

dB

30

dB

Note 1: TA=25°C unless otherwise specified.

Note 2: ESD applied to input and output pins with respect to GND, one at a time.

Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.

Rev. 2 | Page 5 of 16 | www.onsemi.com

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