DCR1475SY29 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DCR1475SY29

Phase Control Thyristor

Dynex Semiconductor 

DCR1475SY

10000

Conditions: IT = 1000A, Tj = 125˚C,

VR = 100V, tp = 1ms forward pulse

QR max

QR min

1000

IRR min

1000

IRR max

100

ITM

QS

dI/dt

100

1

IRR

10

Rate of decay of on-state current dI/dt - (A/µs)

10

100

Fig.4 Stored charge

0.1000

100

Table gives pulse power PGM in Watts

VFGM

Pulse width

µs

100

200

500

1ms

10ms

Pulse frequency Hz

50 100 400

150 150 150

150 150 125

150 150 100

150 100 25

20 -

-

10

100W

50W

20W

10W

5W

2W

Upper limit 99%

1

Lower limit 1%

0.1

0.001

0.01

0.1

1

10

Gate trigger current, IGT - (A)

Fig.5 Gate characteristics

0.1000

0.0100

Anode side cooled

Double side cooled

0.0100

Single side cooled

Double side cooled

0.0010

0.0001

0.001

0.01

Conduction

Effective Thermal Resistance

Junction to case - ˚C/W

Double

Sided

Anode

Sided

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

0.0095

0.0105

0.0112

0.0139

0.0190

0.0200

0.0207

0.0234

0.1

1.0

10

100

Time - (s)

0.0010

0.0001

0.001

0.01

Conduction

Effective Thermal Resistance

Junction to heatsink - ˚C/W

Double

Single

Sided

Sided

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

0.0115

0.0125

0.0132

0.0159

0.1

1.0

Time - (s)

0.0230

0.0240

0.0247

0.0274

10

100

Fig.6 Transient thermal impedance - junction to case

Fig.6 Transient thermal impedance - junction to heatsink

6/9

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