DCR1475SY Ver la hoja de datos (PDF) - Dynex Semiconductor

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DCR1475SY

Phase Control Thyristor

Dynex Semiconductor 

DCR1475SY

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Conditions

Typ. Max. Units

IRRM/IDRM

dV/dt

dI/dt

VT(TO)

rT

tgd

IL

I

H

tq

Peak reverse and off-state current

At VRRM/VDRM, Tcase = 125oC

-

Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC

-

Rate of rise of on-state current

From 67% V to 1000A Repetitive, 50Hz -

DRM

Gate source 20V, 10Ω

t

r

<

0.5µs.

T

j

=

125˚C

Non-repetitive -

Threshold voltage

At Tvj = 125oC

-

On-state slope resistance

Delay time

Latching current

At Tvj = 125oC

-

VD = 67% VDRM, Gate source 30V, 15Ω

Rise time 0.5µs, Tj = 25oC

-

Tj = 25oC, VD = 5V

100

Holding current

T

j

=

25oC,

R

g-k

=∞

30

Turn-off time

I

T

=

800A,

tp

=

1ms,

Tj

=

125˚C,

VRM = 50V, dIRR/dt = 20A/µs,

400

VDR = 67% VDRM, dVDR/dt = 20V/µs linear

250 mA

1000 V/µs

150 A/µs

300 A/µs

0.885 V

0.191 mΩ

2.0

µs

300 mA

100 mA

-

µs

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

IGT

VGD

VFGM

V

FGN

VRGM

IFGM

PGM

P

G(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Conditions

VDRM = 5V, Tcase = 25oC

VDRM = 5V, Tcase = 25oC

At VDRM Tcase = 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

Anode positive with respect to cathode

See table, gate characteristics curve

Max. Units

4.0

V

400 mA

0.25 V

30

V

0.25 V

5

V

30

A

150 W

10

W

4/9

www.dynexsemi.com

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