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Número de pieza
componentes Descripción
DG858BW45 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG858BW45
Gate Turn-off Thyristor
Dynex Semiconductor
DG858BW45 Datasheet PDF : 19 Pages
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DG858BW45
4500
4000
3500
3000
Conditions:
T
j
= 25°C
I
FGM
= 40A
C
s
= 3µF
R
s
= 10 Ohms
dI
T
/dt = 300A/µs
dI
FG
/dt = 40A/µs
2500
2000
V
D
= 3000V
V
D
= 2000V
1500
1000
V
D
= 1000V
500
0
0
500
1000
1500
2000
2500
On-state current I
T
- (A)
Figure 9. Turn-on energy vs on-state current
8000
7000
6000
Conditions:
I
T
= 3000A, T
j
= 25°C,
C
s
= 3.0
µ
F, R
s
= 10 Ohms
dI
T
/dt = 300A/
µ
s,
dI
FG
/dt = 40A/
µ
s
5000
3000
4000
3000
2000
1000
V
D
= 3000V
V
D
= 2000V
V
D
= 1000V
0
0 10 20 30 40 50 60 70 80
Peak forward gate current I
FGM
- (A)
Figure 10. Turn-on energy vs peak forward gate current
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