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Número de pieza
componentes Descripción
DG858BW45 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG858BW45
Gate Turn-off Thyristor
Dynex Semiconductor
DG858BW45 Datasheet PDF : 19 Pages
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DG858BW45
0.015
4000
3500
3000
Conditions:
T
j
= 125°C,
V
DM
= V
DRM
dI
GQ
/dt = 40A/µs
2500
2000
1500
1000
0 1.0 2.0 3.0 4.0 5.0 6.0
Snubber capacitance C
s
- (µF)
Figure 4. Maximum dependence of I
TCM
on Cs
dc
0.010
0.005
0
0.001
0.01
0.1
1.0
Time - (s)
10
100
Figure 5. Maximum (limit) transient thermal impedance - double side cooled
50
40
30
20
10
0
0.0001
0.001
0.01
0.1
1.0
Pulse duration - (s)
Figure 6. Surge (non-repetitive) on-state current vs time
5/19
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