DG858BW45(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DG858BW45
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG858BW45

5500

Conditions;

dc

5000 IG(ON) = 10A

4500

4000

3500

180˚

120˚

3000

2500

2000

60˚

30˚

1500

1000

500

0

0

500

1000

1500

Mean on-state current IT(AV) - (A)

60 70 80 90 100 110 120 130

Maximum permissible case temperature - (˚C)

Figure 7. Steady state rectangular wave conduction loss - double side cooled

4000

3500

Conditions;

IG(ON) = 10A

3000

2500

30˚

2000

120˚

90˚

60˚

180˚

1500

1000

500

0

0 200 400 600 800 1000 1200 80 90 100 110 120 130

Mean on-state current IT(AV) - (A)

Maximum permissible case temperature - (˚C)

Figure 8. Steady state sinusoidal wave conduction loss - double side cooled

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