CM1241(2011) Ver la hoja de datos (PDF) - ON Semiconductor
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CM1241 Datasheet PDF : 7 Pages
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CM1241
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note1)
Symbol
Parameter
Conditions
VF
LV Diode Reverse Voltage
(Positive Voltage)
IF = 10 mA; TA = 25°C
LV Diode Forward Voltage
(Negative Voltage)
IF = 10 mA; TA = 25°C
ILEAK
LV Channel Leakage Current
(Pins 1 and 2)
LV Channel Leakage Current
(Pin 3 only)
TA = −30°C to 65°C; VIN = 3.3 V,
VN = 0 V
TA = −30°C to 65°C; VIN = 3.3 V,
VN = 0 V
CIN
ΔCIN
LV Channel Input Capacitance
LV Channel Input Capacitance
Matching
At 1 MHz, VN = 0 V, VIN = 1.65 V
At 1 MHz, VN = 0 V, VIN = 1.65 V
ILEAK_HV
CIN_HV
VF_HV
HV Channel Leakage Current
HV Channel Input Capacitance
HV Diode Breakdown Voltage
Positive Voltage
TA = 25°C; VCC = 11 V, VN = 0 V
At 1 MHz, VN = 0 V, VIN = 2.5 V
IF = 10 mA; TA = 25°C
VESD
VCL
ESD Protection
Peak Discharge Voltage at any
channel input, in system
Contact discharge per
IEC 61000−4−2 standard
LV Channel Clamp Voltage (Pin 1−3)
Positive Transients
Negative Transients
TA = 25°C
TA = 25°C, IPP = 1 A, tP = 8/20 mS
RDYN
Dynamic Resistance
LV Channel Positive Transients
LV Channel Negative Transients
HV Channel Positive Transients
HV Channel Negative Transients
IPP = 1 A, tP = 8/20 mS
Any I/O pin to Ground
1. All parameters specified at TA = –40°C to +85°C unless otherwise noted.
Min
6.8
–1.05
14.6
Typ Max Units
8.2
9.2
V
–0.9 –0.6
V
100
nA
100
nA
1.2
1.5
pF
0.02
pF
0.1
1.0
mA
53
pF
17.7
V
kV
±8 (Pin 1−3)
±15 (Pin 4)
V
+9.64
–1.75
W
0.72
0.59
1.20
0.36
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