CM1225 Ver la hoja de datos (PDF) - ON Semiconductor
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CM1225 Datasheet PDF : 11 Pages
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CM1225
ELECTRICAL OPERATING CHARACTERISTICS(SEE NOTE 1)
SYMBOL PARAMETER
VF
Diode Forward Voltage
Top Diode
Bottom Diode
ILEAK
Channel Leakage Current
CIN
Channel Input Capacitance
CONDITIONS
IF = 10mA; TA=25ûC;
Note 2
TA=25°C; VIN=3.3V, VN=0V
At 1 MHz, VN=0V, VIN=1.65V
MIN TYP MAX UNITS
0.65 0.85 1.20 V
-1.20 -0.85 -0.65 V
±0.1 ±1.0 µA
0.80 1. 0 pF
∆CIN Channel Input Capacitance Matching
At 1 MHz, VN=0V, VIN=1.65V
0.02
pF
VESD ESD Protection - Peak Discharge Voltage
at any channel input, in system:
Contact discharge per
TA=25°C;
IEC 61000-4-2 standard
Notes 2 and 3
±8
kV
VCL
Channel Clamp Voltage
Positive Transients
Negative Transients
TA=25°C, IPP = 1A,
tP = 8/20µS;
Note 3
+10.0
V
-4.5
V
RDYN Dynamic Resistance
Positive Transients
Negative Transients
IPP = 1A, tP = 8/20µS
Any I/O pin to Ground;
Note 3
1.3
Ω
1.3
Ω
Note 1: All parameters specified at TA = –40°C to +85°C unless otherwise noted.
Note 2: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VN grounded.
Note 3: These measurements performed with no external capacitor.
Rev. 2 | Page 4 of 11 | www.onsemi.com
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