CM1220 Ver la hoja de datos (PDF) - ON Semiconductor

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CM1220

4 and 8-Channel ESD Protection Arrays in CSP

ON Semiconductor 

CM1220

Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Symbol

Parameter

Conditions

Min Typ Max

CDIODE Diode (Channel) Capacitance

At 2.5 VDC Reverse Bias,

11

14

17

1 MHz, 30 mVAC

VDIODE

ILEAK

Diode Standoff Voltage

Diode Leakage Current

IDIODE = 10 mA

VIN = +3.3 V

(reverse bias voltage)

6.0

0.1

1

VSIG

Signal Clamp Voltage

Positive Clamp

Negative Clamp

IDIODE = 10 mA

5.6 6.8 9.0

−1.5 −0.8 −0.4

VESD In−system ESD Withstand Voltage

(Note 2)

a) Human Body Model, MIL−STD−883, Method 3015

±30

b) Contact Discharge per IEC 61000−4−2

±15

RDYN Dynamic Resistance

Positive

2.3

Negative

0.9

1. TA = 25 °C unless otherwise specified.

2. ESD applied to input and output pins with respect to GND, one at a time. Unused pins are left open.

Units

pF

V

mA

V

kV

W

PERFORMANCE INFORMATION

Diode Characteristics (nominal conditions unless specified otherwise)

DC Voltage

Figure 1. Insertion Loss vs. Frequency (0 V Bias)

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