CM1220(2010) Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

CM1220
(Rev.:2010)

4 and 8-Channel ESD Protection Arrays in CSP

ON Semiconductor 

CM1220

Electrical Operating Characteristics (see Note 1)

SYMBOL PARAMETER

CDIODE Diode (Channel) Capacitance

CONDITIONS

MIN

At 2.5VDC Reverse

11

Bias, 1MHz, 30mVAC

TYP MAX UNITS

14

17

pF

VDIODE

ILEAK

Diode Standoff Voltage

Diode Leakage Current

IDIODE = 10µA

VIN = +3.3V

(reverse bias voltage)

6.0

V

0.1

1

µA

VSIG

Signal Clamp Voltage

Positive Clamp

Negative Clamp

IDIODE = 10mA

5.6 6.8 9.0

V

-1.5 -0.8 -0.4 V

VESD In-system ESD Withstand Voltage

Note 2

a) Human Body Model, MIL-STD-883, Method 3015

±30

kV

b) Contact Discharge per IEC 61000-4-2

±15

kV

RDYN Dynamic Resistance

Positive

Negative

2.3

Ω

0.9

Ω

Note 1: TA=25°C unless otherwise specified.

Note 2: ESD applied to input and output pins with respect to GND, one at a time. Unused pins are left open.

Performance Information

Diode Characteristics (nominal conditions unless specified otherwise)

Figure 1. Insertion Loss Vs. Frequency (0V Bias)

Rev.2 | Page 4 of 10 | www.onsemi.com

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