CM1218-C4(2011) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
CM1218-C4 Datasheet PDF : 5 Pages
| |||
CM1218−C4
PACKAGE / PINOUT DIAGRAM & PIN DESCRIPTIONS
Top View
CH1 1
5 CH4
VN 2
CH2 3
4 CH3
5−lead SOT−553
(CM1218−C4SE)
R4C
CHx
VN
= Specific Device Code
= The Cathode of the Respective TVS Diode, which
should be connected to the node requiring transient
voltage protection
= The Anode of the TVS Diodes
SPECIFICATIONS
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Storage Temperature Range
−65 to +150
°C
Package Power Dissipation SOT−553
0.15
W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 2. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature
Rating
−40 to +85
Units
°C
Table 3. ELECTRICAL OPERATING CHARACTERISTICS
Symbol
Parameter
Conditions
Min Typ
CIN
DCIN
VRSO
ILEAK
VSIG
VESD
RD
Channel Input Capacitance
Differential Channel I/O to GND Capacitance
Reverse Stand−off Voltage
Leakage Current
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
ESD Withstand Voltage
Contact Discharge per IEC 61000−4−2 standard
Human Body Model, MIL−STD−883, Method 3015
Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
TA = 25°C, 2.5 VDC, 1 MHz
TA = 25°C, 2.5 VDC, 1 MHz
IR = 10 mA, TA = 25°C
IR = 1 mA, TA = 25°C
VIN = 5.0 VDC, TA = 25°C
I = 10 mA, TA = 25°C
I = −10 mA, TA = 25°C
TA = 25°C; Notes 2 & 3
TA = 25°C; Notes 1 & 3
TA = 25°C; Note 1
7
0.19
5.5
6.1
6.8
−0.8
±15
±30
0.57
1.36
1 Human Body Model per MIL−STD−883, Method 3015, CDischarge = 100 pF, RDischarge = 1.5 KW, VN grounded.
2 Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VN grounded.
3 These measurements performed with no external capacitor on CHX.
Max
1
Units
pF
pF
V
V
mA
V
kV
W
http://onsemi.com
2
Share Link: 