CM1205 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

CM1205

ESD Protection Diode Array Chip Scale Package, 8−Channel

ON Semiconductor 

CM1205

PACKAGE / PINOUT DIAGRAMS

Orientation

Marking

TOP VIEW

(Bumps Down View)

+

120508

BOTTOM VIEW

(Bumps Up View)

B1 B2 B3 B4 B5

A1 A2 A3 A4 A5

CM1205−08

10−bump CSP Package

SPECIFICATIONS

Table 1. ABSOLUTE MAXIMUM RATINGS

Parameter

Rating

Units

Storage Temperature Range

−65 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

Table 2. STANDARD OPERATING CONDITIONS

Parameter

Operating Temperature Range

Rating

−40 to +85

Units

°C

Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Sym-

bol

Parameter

Conditions

Min Typ

Max

VREV

ILEAK

VSIG

Reverse Standoff Voltage

Leakage Current

Signal Clamp Voltage

Positive Clamp

Negative Clamp

IDIODE= 10 mA

VIN= 3.3 V DC

ILOAD= 10mA

6.0

100

5.6 6.8

8.0

−1.2 −0.8

−0.4

VESD In−system ESD Withstand Voltage

Note 2

a) Human Body Model, MIL−STD−883, Method

±30

3015

b) Contact Discharge per IEC 61000−4−2 Level 4

±25

VCL Clamping Voltage during ESD Discharge

MIL−STD−883 (Method 3015), 8 kV

Note 2

Positive Transients

+12

Negative Transients

−8

C Channel Capacitance

At 2.5 V DC, f = 1 MHz

39

47

1. TA = 25 °C unless otherwise specified. GND in this document refers to the lower supply voltage.

2. ESD applied to channel pins with respect to GND, one at a time. All other channels are open. All GND pins tied to ground.

Units

V

nA

V

kV

V

pF

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