CLY5 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
CLY5 Datasheet PDF : 8 Pages
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GaAs FET
CLY 5
________________________________________________________________________________________________________
Electrical characteristics (TA = 25°C , unless otherwise specified)
Characteristics
Symbol min
typ
max Unit
Drain-source saturation current
VDS = 3 V VGS = 0 V
Drain-source pinch-off current
VDS = 3 V VGS = -3.8 V
Gate pinch-off current
VDS = 3 V VGS = -3.8 V
Pinch-off Voltage
VDS= 3 V ID=100µA
Small Signal Gain*)
VDS = 3 V ID = 350 mA
Pin = 0 dBm
Small Signal Gain*)
f = 1.8 GHz
VDS = 5 V ID = 350 mA
Pin = 0 dBm
Small Signal Gain **)
f = 1.8 GHz
VDS = 3 V ID = 350 mA
Pin = 0 dBm
Output Power
f = 1.8 GHz
VDS = 3 V ID = 350 mA
Pin = 19 dBm
Output Power
f = 1.8 GHz
VDS = 5 V ID = 350 mA f = 1.8 GHz
Pin = 21 dBm
1dB-Compression Point
VDS = 3 V ID = 350 mA f = 1.8 GHz
1dB-Compression Point
VDS = 5 V ID = 350 mA f = 1.8GHz
Power Added Efficiency
VDS = 5 V ID = 350 mA f = 1.8 GHz
Pin = 21 dBm
IDSS
ID
IG
VGS(p)
G
G
Gp
Po
Po
P1dB
P1dB
PAE
600
-
-
-3.8
10.5
11.5
9.0
26.5
29.5
-
-
40
800
10
5
-2.8
11.0
12.0
9.5
27
30
26.5
30
55
1200 mA
100
µA
20
µA
-1.8
V
-
dB
-
dB
-
dB
-
dBm
-
dBm
-
dBm
-
dBm
-
%
*) Matching conditions for maximum small signal gain (not identical with power matching conditions!)
**) Power matching conditions: f=1.8GHz:
Source Match: Γms : MAG 0.58; ANG -143°; Load Match: Γml : MAG 0.76; ANG -116°
Siemens Aktiengesellschaft
pg. 2/8
17.12.96
HL EH PD21
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