CEU4269(2006) Ver la hoja de datos (PDF) - Chino-Excel Technology

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componentes Descripción

Fabricante

CEU4269
(Rev.:2006)

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

Chino-Excel Technology 

CEU4269

P-Channel Electrical Characteristics TA = 25 C unless otherwise noted

Parameter

Symbol

Test Condition

Min

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

BVDSS

IDSS

IGSSF

IGSSR

VGS = 0V, ID = -250µA -40

VDS = -40V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics d

Forward Transconductance c

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics d

VGS(th)

RDS(on)

gFS

Ciss

Coss

Crss

VGS = VDS, ID = -250µA -1

VGS = -10V, ID = -5A

VGS = -4.5V, ID = -3A

VDS = -10V, ID = -5A

VDS = -20V, VGS = 0V,

f = 1.0 MHz

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

td(on)

tr

td(off)

VDD = -20V, ID = -5A,

VGS = -10V, RGEN = 3Ω

Turn-On Fall Time

tf

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

VDS = -20V, ID = -5A,

VGS = -10V

Qgd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current b

IS

Drain-Source Diode Forward Voltage c

VSD

VGS = 0V, IS = -1.0A

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Surface Mounted on FR4 Board, t < 10 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.

e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A.

Typ

37

50

3

1120

210

125

13

6

38

7

19.2

3

4

Max Units

V

-1

µA

100 nA

-100 nA

-3

V

45 mΩ

65 mΩ

S

pF

pF

pF

26

ns

12

ns

64

ns

14

ns

25.3 nC

nC

nC

-8

A

-1.2 V

3

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