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CEU4269
(Rev.:2006)

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

Chino-Excel Technology 

CEU4269

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

40V , 14A , RDS(ON) = 32mΩ @VGS = 10V.

RDS(ON) = 46mΩ @VGS = 4.5V.

-40V , -12A , RDS(ON) = 45mΩ @VGS = 10V.

RDS(ON) = 65mΩ @VGS = 4.5V.

G1

Super high dense cell design for extremely low RDS(ON).

D1/D2

G2

High power and current handing capability.

S1

S2

Lead free product is acquired.

D1/D2

S1

TO-252-4L package.

G1

S2

G2

CEU SERIES

TO-252-4L

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

N-Channel P-Channel

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous e

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

40

40

VGS

±20

±20

ID e

14

-12

IDM

56

-48

10.4

PD

0.08

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Units

V

V

A

A

W

W/ C

C

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Symbol

RθJC

RθJA

Limit

12

50

Units

C/W

C/W

Details are subject to change without notice .

1

Rev 1. 2006.Sep

http://www.cetsemi.com

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