CMFSH-3I Ver la hoja de datos (PDF) - Central Semiconductor

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Fabricante

CMFSH-3I

DUAL, ISOLATED SILICON SCHOTTKY DIODES

Central Semiconductor 

CMFSH-3i

DUAL, ISOLATED

SILICON SCHOTTKY DIODES

CentralTM

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMFSH-3i

consists of two electrically isolated silicon

Schottky diodes packaged in an epoxy molded

SOT-143 surface mount case. This devices is

designed fast switching applications requiring a

low forward voltage drop.

MARKING CODE: C3I

SOT-143 CASE

MAXIMUM RATINGS: (TA=25 °C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Forward Surge Current, tp=10ms

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

VRRM

IF

IFRM

IFSM

PD

TJ, Tstg

ΘJA

30

100

200

750

350

-65 to +150

357

V

mA

mA

mA

mW

°C

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25 °C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

IR

IR

BVR

VF

VF

VF

CT

trr

VR=25V

VR=25V, TA=100 °C

IR=100µA

30

IF=2.0mA

IF=15mA

IF=100mA

VR=1.0V, f=1.0MHz

IF=IR=10mA, Irr=1.0mA, RL=100Ω

90

500

25

100

0.29

0.33

0.40

0.45

0.74

1.00

7.0

5.0

UNITS

nA

µA

V

V

V

V

pF

ns

R3 (3-December 2003)

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