ZXM66P03N8 Ver la hoja de datos (PDF) - Zetex => Diodes

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Fabricante

ZXM66P03N8

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXM66P03N8

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNI CONDITIONS.

T

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS -30

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

-1.0

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (1)(3)

gfs

DYNAMIC (3)

-1

-100

0.025

0.035

14.4

V ID=-250µA, VGS=0V

µA VDS=-24V, VGS=0V

nA VGS=±20V, VDS=0V

V

I =-250µA,

D

VDS=

VGS

Ω VGS=-10V, ID=-5.6A

Ω VGS=-4.5V, ID=-2.8A

S VDS=-15V,ID=-5.6A

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

SWITCHING(2) (3)

1979

743

279

pF

VDS=-25 V, VGS=0V,

pF f=1MHz

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate Charge

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qg

Qgs

Qgd

7.6

16.3

94.6

39.6

36

62.5

4.9

19.6

ns

ns VDD =-15V, ID=-5.6A

ns RG=6.2Ω, VGS=-10V

ns

nC VDS=-15V,VGS=-5V

ID=-5.6A

nC

VDS=-15V,VGS=-10V

nC ID=-5.6A

nC

Diode Forward Voltage (1)

VSD

-0.95

Reverse Recovery Time (3)

trr

35

Reverse Recovery Charge(3)

Qrr

39.9

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

V Tj=25°C, IS=-5.6A,

VGS=0V

ns Tj=25°C, IF=-5.6A,

di/dt= 100A/µs

nC

PROVISIONAL ISSUE A - MAY 2001

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