ZXMD63C03XTA(1999) Ver la hoja de datos (PDF) - Zetex => Diodes

Número de pieza

componentes Descripción

Fabricante

ZXMD63C03XTA
(Rev.:1999)

30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMD63C03X

P-CHANNEL

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State

Resistance (1)

Forward Transconductance (3)

DYNAMIC (3)

V(BR)DSS -30

IDSS

IGSS

VGS(th) -1.0

RDS(on)

gfs

0.92

V

-1

µA

±100 nA

V

0.185 Ω

0.27 Ω

S

ID=-250µA, VGS=0V

VDS=-30V, VGS=0V

VGS=± 20V, VDS=0V

ID=-250µA, VDS=VGS

VGS=-10V, ID=-1.2A

VGS=-4.5V, ID=-0.6A

VDS=-10V,ID=-0.6A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

270

pF

VDS=-25 V, VGS=0V,

80

pF f=1MHz

30

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

2.6

4.8

13.1

9.3

7

1.2

2

ns

ns VDD =-15V, ID=-2.4A

ns

RG=6.2Ω, RD=6.2Ω

(Refer to test

ns circuit)

nC

V D S= -2 4 V , V G S= -1 0 V ,

nC ID=-1.2A

(Refer to test

nC circuit)

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

-0.95 V

Reverse Recovery Time (3)

trr

21.4

ns

Reverse Recovery Charge(3)

Qrr

15.7

nC

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

Tj=25°C, IS=-1.2A,

V G S= 0V

Tj=25°C, IF=-1.2A,

di/dt= 100A/µs

PROVISIONAL ISSUE A - JUNE 1999

20

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