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CA2810 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Wideband Linear Amplifier
. . . designed for amplifier applications in 50 ohm systems requiring wide
bandwidth, low noise and low distortion. This hybrid provides excellent gain
stability with temperature and linear amplification as a result of the push–pull
circuit design.
• Specified Characteristics at VCC = 24 V, TC = 25°C:
• Frequency Range — 10 to 450 MHz
Output Power — 1 W Typ @ 1 dB Compression, f = 200 MHz
Power Gain — 34 dB Typ @ f = 50 MHz
PEP — 400 mW Typ @ –32 dB IMD
Noise Figure — 5 dB Max @ f = 300 MHz
• All Gold Metallization for Improved Reliability
Order this document
by CA2810C/D
CA2810C
34 dB
10 – 450 MHz
800 mWATT
WIDEBAND
LINEAR AMPLIFIER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DC Supply Voltage
VCC
28
Vdc
RF Power Input
Pin
+5
dBm
Operating Case Temperature Range
TC
– 20 to +100
°C
Storage Temperature Range
Tstg
– 40 to +100
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C, VCC = 24 V, 50 Ω system unless otherwise noted)
Characteristic
Symbol
Min
Frequency Range
BW
10
Gain Flatness (f = 10– 450 MHz)
Power Gain (f = 50 MHz)
Noise Figure, Boradband (f = 300 MHz)
FL
—
PG
33
NF
—
Power Output — 1 dB Compression (f = 200 MHz)
Third Order Intercept (See Figure 10, f1 = 300 MHz)
Input/Output VSWR (f = 10– 450 MHz)
Po1 dB
800
ITO
—
VSWR
—
Second Harmonic Distortion
(Po = 100 mW, f2H = 10 – 300 MHz)
dso
—
Reverse Isolation (f = 10– 450 MHz)
—
—
Peak Envelope Power
(Two Tone Distortion Test — See Figure 10)
(f = 10 – 450 MHz @ –32 dB IMD)
PEP
—
Supply Current
ICC
270
CASE 714F–03, STYLE 1
[CA (POS. SUPPLY)]
Typ
Max
—
450
—
±1.5
34
35
—
5
1000
—
43
—
—
2:1
– 55
– 45
40
—
400
—
Unit
MHz
dB
dB
dB
mW
dBm
—
dB
dB
mW
310
330
mA
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CA2810C
1
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