BZD142W Ver la hoja de datos (PDF) - Philips Electronics
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BZD142W Datasheet PDF : 8 Pages
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Philips Semiconductors
ZenBlockTM; zener with
integrated blocking diode
Product specification
BZD142W
ELECTRICAL CHARACTERISTICS ZENER/TVS
Tj = 25 °C unless otherwise specified.
TYPE
NUMBER
SUFFIX(1)
68
100
160
180
200
WORKING VOLTAGE
VZ (V) at Itest
MIN.
61
90
149
162
180
NOM.
68
100
160
180
200
MAX.
75
110
171
198
220
TEMPERATURE TEST
COEFFICIENT CURRENT
SZ (%/K) at Itest
MIN.
0.07
0.07
0.07
0.07
0.07
MAX.
0.12
0.12
0.12
0.12
0.12
Itest (mA)
10
5
5
5
5
CLAMPING
VOLTAGE
V(CL)R
(V)
MAX.
106
139
224
250
277
at IRSM
(A)(2)
0.94
0.72
0.45
0.40
0.36
REVERSE CURRENT
at STAND-OFF
VOLTAGE
IR (µA)
MAX.
5
5
5
5
5
at VR (V)
56
82
130
150
160
Notes
1. To complete the type number the suffix is added to the basic type number, e.g. BZD142W-68.
2. Non-repetitive peak reverse current in accordance with “IEC 60060-1, Section 8” (10/1000 µs pulse); see Fig.5.
ELECTRICAL CHARACTERISTICS BLOCKING DIODE
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)R
IR
Cd
reverse avalanche breakdown
voltage
reverse current
diode capacitance
IR = 0.1 mA
VR = 600 V
VR = 600 V; Tj = 150 °C
f = 1 MHz; VR = 0 V;
see Fig.3
MIN.
700
−
−
−
TYP.
−
−
−
15
MAX. UNIT
−
V
5
µA
100
µA
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
30
K/W
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.4.
For more information please refer to the “General Part of associated Handbook”.
2001 Oct 10
3
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