BYV28-100 Ver la hoja de datos (PDF) - Philips Electronics

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BYV28-100

Ultra fast low-loss controlled avalanche rectifiers

Philips Electronics 

Philips Semiconductors

Ultra fast low-loss

controlled avalanche rectifiers

Product specification

BYV28 series

SYMBOL

PARAMETER

Cd

diode capacitance

BYV28-50 to 200

BYV28-300 and 400

BYV28-500 and 600

-d-d--I--tR--

maximum slope of reverse

recovery current

CONDITIONS

f = 1 MHz; VR = 0;

see Figs 17, 18 and 19

when switched from

IF = 1 A to VR ≥ 30 V and

dIF/dt = −1 A/µs; see Fig.21

MIN.

−

−

−

−

TYP.

190

150

125

−

MAX. UNIT

− pF

− pF

− pF

4 A/µs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE UNIT

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

lead length = 10 mm

note 1

25

K/W

75

K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.20

For more information please refer to the “General Part of associated Handbook”.

1997 Nov 24

4

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