BYT42M Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

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BYT42M

FAST RECOVERY RECTIFIER

Galaxy Semi-Conductor 

RATINGS AND CHARACTERISTIC CURVES

BYT42A(Z)---BYT42M(Z)

FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

50

10

N.1.

N.1.

trr

+0.5A

(+)

50VDC

(APPROX)

(-)

D.U.T.

1

N.1.

OSCILLOSCOPE

(NOTE 1)

(-)

PULSE

GENERATOR

(NOTE2)

(+)

NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF

2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O

0

-0.25A

-1.0A

1cm

SETTIMEBASEFOR50/100 ns /cm

FIG.2 --TYPICAL FORWARD CHARACTERISTIC

FIG.3 -- FORWARD DERATING CURVE

30

20

TJ=25

Pulse Width=300µS

1.4

1.2

1.0

0.4

0.2

0.1

0.06

0.04

0.02

0.01

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0

20 40

Single Phase

Half Wave 60Hz

Resistive or

Inductive Load

60 80 100 120 140 160 180

INSTANTANEOUS FORWARD VOLTAGE,VOLTS

AMBIENT TEMPERATURE,

FIG.4--TYPICAL JUNCTION CAPACITANCE

FIG.5--PEAK FORWARD SURGE CURRENT

200

100

60

40

20

10

6

4

TJ=25

f=1MHz

2

1

.1 .2 .4 1.0 2

4 10 20 40 100

REVERSE VOLTAGE,VOLTS

40

30

20

TJ=125

8.3ms Single Half

Sine-Wave

10

0

1

10

100

NUMBER OF CYCLES AT 60 Hz

Document Number 0261042

BLGALAXY ELECTRICAL

www.galaxycn.com

2.

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