BYV1040 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BYV1040 Datasheet PDF : 4 Pages
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Philips Semiconductors
Schottky barrier diodes
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
CONDITIONS
IF = 0.1 A
IF = 1 A
IF = 3 A
VR = VRRMmax; note 1
VR = 0 V; f = 1 MHz
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SOD81 standard mounting conditions.
Product specification
BYV10 series
MIN.
−
−
−
−
−
TYP.
−
−
−
−
220
MAX.
390
550
850
1
−
UNIT
mV
mV
mV
mA
pF
CONDITIONS
note 1
VALUE UNIT
100
K/W
1996 May 13
3
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