BYD47 Ver la hoja de datos (PDF) - Philips Electronics
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Fabricante
BYD47 Datasheet PDF : 12 Pages
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Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYD47 series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
trr
reverse recovery time
Cd
diode capacitance
-d-d--I--tR--
maximum slope of reverse recovery
current
CONDITIONS
IF = 1 A; Tj = Tj max; see Fig.8
IF = 1 A; see Fig.8
VR = VRRMmax;
see Fig.9
VR = VRRMmax; Tj = 125 °C;
see Fig.9
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.12
f = 1 MHz; VR = 0 V; see Fig.10
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1 A/µs;
see Fig.13
TYP.
−
−
−
−
−
15
−
MAX.
2.05
2.40
5
UNIT
V
V
µA
50 µA
300 ns
− pF
5 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
30
K/W
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the “General Part of associated Handbook”.
1999 Nov 11
3
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