BUZ900P Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc
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BUZ900P Datasheet PDF : 4 Pages
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MAGNA
TEC
BUZ900P
BUZ901P
MECHANICAL DATA
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
N–CHANNEL
POWER MOSFET
POWER MOSFETS FOR
AUDIO APPLICATIONS
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
123
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087)
2.59 (0.102)
Pin 1 – Gate
TO–247
Pin 2 – Source
5.25 (0.215)
BSC
Pin 3 – Drain
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE AS
BUZ905P & BUZ906P
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
VDSX
Drain – Source Voltage
VGSS
Gate – Source Voltage
ID
Continuous Drain Current
ID(PK)
Body Drain Diode
PD
Total Power Dissipation
@ Tcase = 25°C
Tstg
Storage Temperature Range
Tj
Maximum Operating Junction Temperature
RθJC
Thermal Resistance Junction – Case
BUZ900P
160V
BUZ901P
200V
±14V
8A
8A
125W
–55 to 150°C
150°C
1.0°C/W
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
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