BUZ350 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BUZ350

SIPMOS ® Power Transistor

Infineon Technologies 

BUZ 350

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter

Symbol

min.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 14 A

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

Rise time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

Fall time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

gfs

9

Ciss

-

Coss

-

Crss

-

td(on)

-

tr

-

td(off)

-

tf

-

Values

Unit

typ.

max.

S

15

-

pF

1400

1900

280

400

130

200

ns

30

45

70

110

250

320

90

120

Data Sheet

3

05.99

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