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Número de pieza
componentes Descripción
BUZ357 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
BUZ357
SIPMOS ® Power Transistor
Siemens AG
BUZ357 Datasheet PDF : 8 Pages
1
2
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5
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8
BUZ 357
Avalanche energy
E
AS
=
Æ’
(
T
j
)
parameter:
I
D
= 5.1 A,
V
DD
= 50 V
R
GS
= 25
Ω
,
L
= 62 mH
900
mJ
E
AS
700
600
500
400
300
200
100
0
20 40 60 80 100 120 °C 160
T
j
Drain-source breakdown voltage
V
(BR)DSS
=
Æ’
(
T
j
)
Typ. gate charge
V
GS
=
Æ’
(
Q
Gate
)
parameter:
I
D puls
= 8 A
16
V
V
GS
12
10
0,2
V
DS max
0,8
V
DS max
8
6
4
2
0
0 20 40 60 80 100 120 140 160 nC 200
Q
Gate
1200
V
1160
V
(BR)DS
1
S
140
1120
1100
1080
1060
1040
1020
1000
980
960
940
920
900
-60
-20
20
60
100 °C 160
T
j
Semiconductor Group
8
01/97
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