BUV42 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
BUV42 Datasheet PDF : 5 Pages
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BUV42
ELECTRICAL CHARACTERISTICS (continued)
Sy mbo l
P ar am et e r
T est Con ditio ns
tr
RESISTIVE LOAD
ts
Rise Time
tf
Storage Time
Fall Time
VCC = 200V
VBB = -5V
RB2 = 3.3Ω
INDUCTIVE LOAD
ts
Storage Time
VCC = 200V
tf
Fall Time
ICC = 4A
tt
Tail Time in Turn-on VBB = -5V
tc
Crossover Time
LC = 2.5mH
IC = 6A
IB1 = 0.75A
Tp = 30µs
Vc la mp = 250V
IB = 0.4A
RB2 = 6.3Ω
ts
Storage Time
VCC = 200V
tf
Fall Time
ICC = 4A
tt
Tail Time in Turn-on VBB = -5V
tc
Crossover Time
LC = 2.5mH
Vc la mp = 250V
IB = 0.4A
RB2 = 6.3Ω
Tj = 100oC
ts
Storage Time
VCC = 200V
tf
Fall Time
ICC = 4A
tt
Tail Time in Turn-on VBB = 0
LC = 2.5mH
Vc la mp = 250V
IB = 0.5A
RB2 = 7.5Ω
ts
Storage Time
VCC = 200V
tf
Fall Time
ICC = 4A
tt
Tail Time in Turn-on VBB = 0
LC = 2.5mH
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 2 %
Vc la mp = 250V
IB = 0.4A
RB2 = 7.5Ω
Tj = 100oC
Min.
T yp.
0.3
1
0.15
Max.
0 .4
1 .6
0 .3
Unit
µs
µs
µs
1.2 1.8
µs
0.08 0.2
µs
0.03 0.12 µs
0.15 0.35 µs
1.8 2.4
µs
0.2 0.4
µs
0.08 0.2
µs
0.4 0.7
µs
2.5
µs
0.4
µs
0.15
µs
4.8
µs
0.7
µs
0.4
µs
3/5
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