BUV42 Ver la hoja de datos (PDF) - STMicroelectronics
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BUV42 Datasheet PDF : 5 Pages
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BUV42
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
1. 46
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy mbo l
P ar am et e r
T est Con ditio ns
ICER
Collector Cut-off
Current (RBE = 10Ω)
VCE = VCEV
VCE = VCEV
Tc = 100oC
ICEV Collector Cut -off
Cur ren t
VCE = VCEV VBE = -1.5V
VCE = VCEV VBE = - 1.5V TC=100oC
IEBO
Emitter Cut- off
Current (IC = 0)
VCEO(sus)∗ Collector-Emitt er
Sustaining Voltage
VEB = 5 V
IC = 0.2A
L = 25 mH
VEB0
VCE(sat)∗
E m i t t er - ba s e
Voltage (Ic = 0)
Col lec t or-E mit t er
Saturation Voltage
IE = 50 mA
IC = 2A
IC = 4A
IC = 6A
IC = 2A
IC = 4A
IC = 6A
IB = 0.13A
IB = 0.4A
IB = 0.75A
IB = 0.13A
IB = 0.4A
IB = 0.75A
Tj = 100oC
Tj = 100oC
Tj = 100oC
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 4A
IC = 6A
IC = 4A
IC = 6A
IB = 0.4A
IB = 0.75A
IB = 0.4A
IB = 0.75A
Tj = 100oC
Tj = 100oC
dic/dt∗
Rated of Rise of
on-state Collector
Cur ren t
VCC = 200V RC = 0
IB1 = 0.6A
Tj = 25oC
Tj = 100oC
VCE(2µs ) Collector Emitter
Dynamic Voltage
VCC = 200V
RC = 50Ω
IB1 = 0.4A
Tj = 25oC
Tj = 100oC
VCE(4µs ) Collector Emitter
Dynamic Voltage
VCC = 200V
RC = 50Ω
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 2 %
IB1 = 0.4A
Tj = 25oC
Tj = 100oC
Min.
250
7
25
20
T yp.
0.25
0.4
0.5
0.25
0.45
0.6
1
1.1
0.9
1.1
40
35
1.7
2.5
0.9
1.1
Max.
0 .5
2 .5
0 .5
2
1
0 .8
0 .9
1 .2
0 .9
1 .2
1 .5
1 .3
1 .5
1 .3
1 .5
2 .5
4
1 .7
2
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
V
V
A/µs
A/µs
V
V
V
V
2/5
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