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BUV21 Datasheet PDF : 4 Pages
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BUV21
SWITCHMODEt Series
NPN Silicon Power
Transistor
This device is designed for high speed, high current, high power
applications.
Features
• High DC Current Gain:
hFE min = 20 at IC = 12 A
• Low VCE(sat), VCE(sat)
max = 0.6 V at IC = 8 A
• Very Fast Switching Times:
TF max = 0.4 ms at IC = 25 A
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol
Value
Collector−Emitter Voltage
VCEO(SUS)
200
Collector−Base Voltage
VCBO
250
Emitter−Base Voltage
VEBO
7
Collector−Emitter Voltage (VBE = −1.5 V)
VCEX
250
Collector−Emitter Voltage (RBE = 100 W)
VCER
240
Collector−Current − Continuous
IC
40
− Peak (PW v 10 ms)
ICM
50
Base−Current Continuous
IB
8
Total Device Dissipation @ TC = 25_C
PD
250
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to 200
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Adc
W
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
0.7
_C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
40 AMPERES
NPN SILICON POWER
METAL TRANSISTOR
200 VOLTS − 250 WATTS
BASE
1
NPN
COLLECTOR
CASE
EMITTER 2
MARKING
DIAGRAM
1
2
TO−204AE (TO−3)
CASE 197A
STYLE 1
BUV21G
AYWW
MEX
BUV21 = Device Code
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW = Work Week
MEX = Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
BUV21G
TO−204
(Pb−Free)
100 Units / Tray
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 11
Publication Order Number:
BUV21/D
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