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BUL642D2

3 AMPERES 825 VOLTS 75 WATTS POWER TRANSISTOR

ON Semiconductor 

BUL642D2

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Sustaining Voltage

Collector−Base Breakdown Voltage

Emitter−Base Voltage

Collector Current − Continuous

− Peak (Note 1)

Base Current

− Continuous

− Peak (Note 1)

*Total Device Dissipation @ TC = 25°C

*Derate above 25°C

VCEO

VCES

VEBO

IC

ICM

IB

IBM

PD

440

Vdc

825

Vdc

11

Vdc

3.0

Adc

8.0

2.0

Adc

4.0

75

W

0.6

W/°C

Operating and Storage Temperature

TJ, Tstg − 65 to +150 °C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

TYPICAL GAIN

Rating

Symbol

Value

Unit

Typical Gain @ IC = 1 A, VCE = 2 V

Typical A, VCE = 1 V

THERMAL CHARACTERISTICS

hFE

45

−

hFE

50

−

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Maximum Lead Temperature for Soldering Purposes: 1/8 in. from Case for 5 seconds

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%

RqJC

RqJA

TL

1.6

°C/W

62.5

°C/W

260

°C

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