BUR52S Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc

Número de pieza

componentes Descripción

Fabricante

BUR52S

HIGH CURRENT NPN SILICON TRANSISTOR

Semelab - > TT Electronics plc  

BUR52S

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

Collector - Emitter Sustaining

VCEO(sus) Voltage

IC = 200mA

250

Emitter – Base Breakdown

V(BR)EBO Voltage

IC = 0

IE = 10mA

10

ICEO

Collector Emitter Cut-off

Current

VCE = 250V

IB = 0

ICBO

Collector -Base Cut-off Current VCE = 350V

IE = 0

TC = 125°C

IEBO

Emitter–Base Cut-off Current IC = 0

VEB = 7V

VCE(sat)*

VBE(sat)*

Collector – Emitter

Saturation Voltage

Base – Emitter

Saturation Voltage

ft

Transition Frequency

ton

Turn–On Time

tf

Fall Time

ts

Storage Time

*Pulsed tp =300µs @< 1%

IC = 25A

IC = 40A

IC = 25A

IC = 40A

IC = 1A

f = 1MHz

IC = 40A

VCC = 100V

IC = 40A

IB2 - 4A

IC = 40A

IB2 - 4A

IB = 2A

IB = 4A

IB = 2A

IB = 4A

VCE = 5V

IB = 4A

IB1 =4A

VCC = 100V

IB1 =4A

VCC = 100V

Typ.

0.7

1.5

10

0.3

0.2

1.2

Max. Unit

V

V

1

mA

0.2

mA

2

0.2

µA

1

V

1.5

1.8

V

2

16 MHz

1

0.6

µs

2

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Document Number 5773

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Issue 1

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