BUL54BFI Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc

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componentes Descripción

Fabricante

BUL54BFI

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

Semelab - > TT Electronics plc  

SEME

LAB

BUL54BFI

MECHANICAL DATA

Dimensions in mm

10.2

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

HIGH SPEED NPN

SILICON POWER TRANSISTOR

3.6 Dia.

Designed for use in

electronic ballast applications

123

1.3

0 .8 5

2.54 2.54

ISOLATED TO220

Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE

• FAST SWITCHING

• HIGH ENERGY RATING

• MILITARY AND HI–REL VERSIONS

AVAILABLE IN METAL AND CERAMIC

SURFACE MOUNT PACKAGES

FEATURES

• Multi–base for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

• Triple Guard Rings for improved control of

high voltages.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VCBO

Collector – Base Voltage

800V

VCEO

Collector – Emitter Voltage (IB = 0)

400V

VEBO

Emitter – Base Voltage (IC = 0)

10V

IC

Continuous Collector Current

5A

IC(PK)

Peak Collector Current

8A

IB

Base Current

3A

Ptot

Total Dissipation at Tcase = 25°C

30W

Tstg

Operating and Storage Temperature Range

–55 to +150°C

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 3/95

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