BUJ302AD Ver la hoja de datos (PDF) - Philips Electronics

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Fabricante

BUJ302AD

NPN power transistor

Philips Electronics 

NXP Semiconductors

BUJ302AD

NPN power transistor

102

IC

(A)

ICM(ma1x0)

IC(max)

1

10−1

001aac001

duty cycle = 0.01

II(3)

tp = 20 μs

(1)

50 μs

100 μs

200 μs

(2)

500 μs

DC

10−2

I(3)

10−3

1

10

102

Fig 4.

1)Ptot maximum and Ptot peak maximum lines

2)Second breakdown limits

3) I = Region of permissable DC operation

II = Extension for repetitive pulse operation

III = Extension during turn-on in single transistor converters

provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs

Forward bias safe operating area for Tmb ≤ 25 °C

III(3)

103

VCEclamp (V)

BUJ302AD

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 01 — 28 March 2011

© NXP B.V. 2011. All rights reserved.

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