BUJ302AD Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

BUJ302AD

NPN power transistor

Philips Electronics 

BUJ302AD

NPN power transistor

Rev. 01 — 28 March 2011

Product data sheet

1. Product profile

1.1 General description

High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428

(DPAK) surface mounted package.

1.2 Features and benefits

„ Fast switching

„ High voltage capability

„ Low thermal resistance

„ Surface-mountable package

1.3 Applications

„ DC-to-DC converters

„ High-frequency electronic lighting

ballast applications

„ Inverters

„ Motor control systems

1.4 Quick reference data

Table 1.

Symbol

IC

Quick reference data

Parameter

collector current

Ptot

VCESM

total power dissipation

collector-emitter peak

voltage

Static characteristics

hFE

DC current gain

Conditions

see Figure 1; see Figure 2;

see Figure 4

Tmb ≤ 25 °C; see Figure 3

VBE = 0 V

Min Typ Max Unit

-

-

4

A

-

-

80 W

-

-

1050 V

IC = 0.1 A; VCE = 5 V;

[1] 48 66 100

Tmb = 25 °C; see Figure 11

IC = 0.8 A; VCE = 3 V;

[1] 25 42 50

Tmb = 25 °C; see Figure 12

[1] Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %

Share Link: