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BU941Z Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
BU941Z Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BU941Z/BU941ZP/BU941ZPFI
THERMAL DATA
Rthj-ca se Thermal Resistance Junct ion-case Max
TO-3
0.97
TO-218
0.97
ISOW AT T21 8
2.3
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
S ymb ol
P a ra m et er
Test Conditions
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 300 V
VCE = 300 V
Tj = 125 oC
IEBO
V CL
Emitter Cut-off Current VEB = 5 V
(IC = 0)
Clamping Voltage
IC = 100 mA
VCE(sat)Collector-Emitter
Saturation Voltage
IC = 8 A
IC = 10 A
IC = 12 A
IB = 100 mA
IB = 250 mA
IB = 300 mA
VBE(s at)Base-Emitt er
Saturation Voltage
hF EDC Current Gain
IC = 8 A
IC = 10 A
IC = 12 A
IC = 5 A
IB = 100 mA
IB = 250 mA
IB = 300 mA
VCE = 10 V
VF
Diode Forward Voltage IF = 10 A
Functional Test
(see fig. 1)
VCC = 24 V
L= 7 mH
INDUCTIVE LO AD
VCC = 12 V
ts
Storage Time
VBE = 0
tf
Fall Time
Vc la mp = 300 V
(see fig. 3)
IB = 70 mA
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
L= 7 mH
RBE = 47
IC = 7 A
Min. Typ.
350
300
10
15
0.5
Max.
100
0.5
20
500
1.8
1.8
2
2.2
2.5
2.7
2.5
Unit
µA
mA
mA
V
V
V
V
V
V
V
V
A
µs
µs
Safe Operating Area
DC Current Gain
2/8

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