BU4S81G2-TR(2015) Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza

componentes Descripción

Fabricante

BU4S81G2-TR
(Rev.:2015)

Single 2-Input NAND Gate

ROHM Semiconductor 

BU4S11G2

Test Circuits

1.VIH

VDD

VIH

2.VIL

+

IOUT V VOUT

VIL

VDD

+

IOUT V VOUT

3.VOH

VDD

VIN

4.VOL

+

IOUT V VOH

VIN

VDD

+

IOUT V VOL

5.IOH

VDD

6.IOL

VDD

VIN

A

+

IOH

VIN

A

+

IOL

V OH

VOL

7. tTLH, tTHL, tPLH, tPHL

VDD

INPUT

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TSZ22111 • 15 • 001

20 ns

20 ns

OUTPUT

CL=50pF

INPUT

90%

50%

10%

tPHL

tPLH

OUTPUT

90%

50%

10 %

tTHL

tTLH

Description of Symbols

tPHL : Time from 50% of the rise edge of input waveform to 50% of

the fall edge of output waveform

tPLH : Time from 50% of the fall edge of input waveform to 50% of

the rise edge of output waveform

tTHL : Time from 90% to 10% of fall edge of output waveform

tTLH : Time from 10% to 90% of rise edge of output waveform

4/12

TSZ02201-0RDR0GZ00170-1-2

30.Sep.2015 Rev.002

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