BU4S81G2-TR(2015) Ver la hoja de datos (PDF) - ROHM Semiconductor
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BU4S81G2-TR Datasheet PDF : 16 Pages
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BU4S11G2
Electrical Characteristics
(Unless otherwise specified, VSS=0V, TA=25°C)
Parameter
Input “H” Voltage
Symbol
VIH
Input “L” Voltage
VIL
Input “H” Current
IIH
Input “L” Current
IIL
Output “H” Voltage
VOH
Output “L” Voltage
VOL
Output “H” Current
IOH
Output “L” Current
IOL
Quiescent Supply Current IDD
Min
3.5
7.0
11.0
-
-
-
-
-
4.95
9.95
14.95
-
-
-
-0.51
-2.1
-1.3
-3.4
0.51
1.3
3.4
-
-
-
Limits
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
1.5
3.0
4.0
0.3
-0.3
-
-
-
0.05
0.05
0.05
-
-
-
-
-
-
-
0.25
0.5
1.0
Unit
VDD [V]
Conditions
5
VOUT=0.5V
V
10
VOUT=1.0V
15
VOUT=1.5V
5
VOUT=4.5V
V
10
VOUT=9.0V
15
VOUT=13.5V
μA
15
VIH=15V
μA
15
VIL=0V
5
V
10
IIOUT|<1μA
VIN=VSS
15
5
V
10
|IOUT|<1μA
VIN=VDD
15
5
VOH=4.6V
mA
5
VOH=2.5V
VIN=VSS
10 VOH=9.5V
15 VOH=13.5V
5
VOL=0.4V
mA
10
VOL=0.5V VIN=VDD
15 VOL=1.5V
5
μA
10
VIN=VDD or VSS
15
Parameter
Symbol
Min
-
Output Rising Time
tTLH
-
-
-
Output Falling Time
tTHL
-
-
-
“L” to ”H”
Propagation Delay Time
tPLH
-
-
-
“H” to ”L”
Propagation Delay Time
tPHL
-
-
Input Capacitance
CIN
-
Limits
Unit
Typ Max
VDD [V]
70
-
5
35
-
ns
10
30
-
15
70
-
5
35
-
ns
10
30
-
15
85
-
5
40
-
ns
10
30
-
15
85
-
5
40
-
ns
10
30
-
15
5
-
pF
-
Conditions
CL=50pF
CL=50pF
CL=50pF
CL=50pF
-
Figure
No.
2
3
4
2
3
4
-
-
2
3
4
2
3
4
5
6
-
Figure
No.
7
8
9
10
-
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TSZ02201-0RDR0GZ00170-1-2
30.Sep.2015 Rev.002
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