BU4S81G2-TL(2015) Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza

componentes Descripción

Fabricante

BU4S81G2-TL
(Rev.:2015)

Single 2-Input NAND Gate

ROHM Semiconductor 

BU4S11G2

Absolute Maximum Ratings (TA=25°C)

Parameter

Symbol

Rating

Unit

Supply Voltage

VDD

-0.3 to +18.0

V

Input Voltage

VIN

-0.3 to VDD+0.3

V

Input Current

IIN

±10

mA

Operating Temperature

Topr

-40 to +85

°C

Storage Temperature

Tstg

-55 to +150

°C

Maximum Junction Temperature

TJmax

+150

°C

Power Dissipation

PD

0.67 (Note 1)

W

(Note 1) Derate by 5.4mW/°C when operating above TA=25°C (when mounted on ROHM’s standard board).

Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit

between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over

the absolute maximum ratings.

Recommended Operating Conditions (TA=-40°C to +85°C)

Parameter

Symbol

Rating

Unit

Supply Voltage

Input Voltage

VDD

+3.0 to +16.0

V

VIN

0 to VDD

V

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TSZ02201-0RDR0GZ00170-1-2

30.Sep.2015 Rev.002

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