BU4S81G2-TR(2015) Ver la hoja de datos (PDF) - ROHM Semiconductor
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BU4S81G2-TR Datasheet PDF : 16 Pages
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Datasheet
General Purpose CMOS Logic IC
Single 2-Input NAND Gate
BU4S11G2
General Description
The BU4S11G2 is a 2-input NAND gate.
An inverter-based buffer is incorporated at the gate output
to improve I/O transmission characteristics, and it
minimizes a variation in the propagation delay time
caused by an increase in the load capacitance.
Key Specifications
Supply Voltage Range:
Input Voltage Range:
Operating Temperature Range:
+3V to +16V
0V to VDD
-40°C to +85°C
Features
Low power consumption
High noise immunity
Wide operating supply voltage range
High input impedance
High fan out
Input can be directly driven 2 L-TTL inputs or 1 LS-TTL
Buffered output
Packages
SSOP5
W(Typ) x D(Typ) x H(Max)
2.90mm x 2.80mm x 1.25mm
Pin Configurations
(Top View)
VDD
Y
5
4
1
2
3
A
B
VSS
SSOP5
Pin Descriptions
Pin No. Symbol
1
A
2
B
3
VSS
4
Y
5
VDD
I/O
Function
I
Input
I
Input
-
Ground
O
Output
-
Power supply
Truth Table
INPUT
A
B
L
L
L
H
H
L
H
H
OUTPUT
Y
H
H
H
L
〇Product structure : Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
〇This product has no designed protection against radioactive rays
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TSZ02201-0RDR0GZ00170-1-2
30.Sep.2015 Rev.002
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