BU4S81 Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza

componentes Descripción

Fabricante

BU4S81

Single 2-input NOR gate

ROHM Semiconductor 

Standard ICs

•Electrical characteristics

DC characteristics (unless otherwise noted, Ta = 25°C, VSS = 0V)

Parameter

Symbol Min. Typ. Max. Unit

3.5 2.75

—

V

Input high level voltage

VIH

7.0

5.5

—

V

11.0 8.25

—

V

—

2.25

1.5

V

Input low level voltage

VIL

—

4.5

3.0

V

—

6.75

4.0

V

Input high level current

IIH

—

—

0.3

µA

Input low level current

IIL

—

— – 0.3

µA

4.95 5.0

—

V

Output high level voltage VOH 9.95 10.0

—

V

14.95 15.0

—

V

—

—

0.05

V

Output low level voltage

VOL

—

—

0.05

V

—

—

0.05

V

– 0.51 – 1.0

—

mA

– 2.1 – 4.0

—

mA

Output high level current IOH

– 1.3 – 2.2

—

mA

– 3.4 – 9.0

—

mA

0.51 1.2

—

mA

Output low level current

IOL

1.3

3.2

—

mA

3.4 12.0

—

mA

— 0.001 0.25

µA

Static current dissipation IDD

— 0.001 0.5

µA

— 0.002 1.0

µA

VDD (V)

5

10

15

5

10

15

18

18

5

10

15

5

10

15

5

5

10

15

5

10

15

5

10

15

Conditions

| IOUT | < 1µA

| IOUT | < 1µA

VIH = 18V

VIL = 0V

| IOUT | < 1µA

VIN = VSS or VDD

| IOUT | < 1µA

VIN = VSS

VOH = 4.6V

VOH = 2.5V

VOH = 9.5V

VOH = 13.5V

VOL = 0.4V

VOL = 0.5V

VOL = 1.5V

VIN = VSS or VDD

BU4S81

Measurement

circuit

Fig.1

2

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