BU4S66G2-TL Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza

componentes Descripción

Fabricante

BU4S66G2-TL

Single Analog Switch

ROHM Semiconductor 

BU4S66G2

Block Diagram

IN / OUT

CONT

OUT / IN

Absolute Maximum Ratings (TA = 25°C)

Parameter

Symbol

Rating

Unit

Supply Voltage

VDD

-0.3 to +18.0

V

Control Input Voltage

Analog Switch Input/Output Voltage

Control Input Current

VCIN

VIN / VOUT

ICIN

(VSS-0.3) to (VDD+0.3)

V

(VSS-0.3) to (VDD+0.3)

V

±10

mA

Operating Temperature

Topr

-40 to +85

°C

Storage Temperature

Tstg

-55 to +150

°C

Maximum Junction Temperature

TJmax

+150

°C

Power Dissipation

PD

0.67 (Note 1)

W

(Note 1) Derate by 5.4mW/°C when operating above TA=25°C (when mounted on ROHM’s standard board)

Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins

or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding

a fuse, in case the IC is operated over the absolute maximum ratings.

Recommended Operating Conditions (TA= -40°C to +85°C)

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

Control Input Voltage

Analog Switch Input/Output Voltage

VDD

3.0

-

16

V

VCIN

VSS

-

VDD

V

VIN / VOUT

VSS

-

VDD

V

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TSZ02201-0RDR0GZ00270-1-2

30.Sep.2015 Rev.002

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