AS4LC1M16S1(2000) Ver la hoja de datos (PDF) - Alliance Semiconductor

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componentes Descripción

Fabricante

AS4LC1M16S1
(Rev.:2000)

3.3V 2M × 8/1M × 16 CMOS synchronous DRAM

Alliance Semiconductor 

AS4LC2M8S1

AS4LC1M16S1

DQM waveforms:

CLK

CMD

DQM

Read data

DQ(CL = 3)

DQ(CL = 2)

DQM waveforms:

CLK

tDQZ

Q0

Q0

Q1

tDQZ

read (CL = 3, BL = 4)

Q2

Q3

write (BL = 4)

CMD

Write data

Ext DIN

D0

D1

D2

D3

DQM

Data written

D0

D3

D1ignored

D2 ignored

Concurrent Auto-P Waveforms

According to Intel™’s specification, auto-p burst interruption is allowed by another burst provided that the interrupting burst is in a

different bank than the ongoing burst.

(A) RD-P interrupted by RD in another bank

(CL = 3, BL = 4)

CLK

CMD

RD-P(A)

RD (B)

DQ

A0

A1

B0

B1

B2

B3

Bank A precharge starts

tRP(A)

(B) RD-P interrupted by WR in another bank

CLK

(CL = 3, BL = 8)

CMD

RD-P (A)

WR (B)

DQM

DQ

QA0

QA1

DN(B0)

D(B1)

tRP

Bank A precharge starts

D(B2)

D(B7)

16

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