BU2506AX Ver la hoja de datos (PDF) - Inchange Semiconductor
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BU2506AX Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2506AX
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.79A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; IB=B 0.79A
VCE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC=125℃
VEB= 7.5V ; IC= 0
hFE-1
DC Current Gain
IC= 0.3A ; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
MIN TYP. MAX UNIT
700
V
7.5
V
5.0
V
1.1
V
1.0
2.0
mA
1.0 mA
12
3.8
7.5
47
pF
isc Website：www.iscsemi.cn
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