BU2525DF Ver la hoja de datos (PDF) - Philips Electronics
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BU2525DF Datasheet PDF : 7 Pages
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2525DF
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
10us
13us
32us
IBend
t
t
Fig.1. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
IF
IF
10%
t fr
time
VF
5V
V fr
VF
time
Fig.3. Definition of anti-parallel diode Vfr and tfr
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
D.U.T.
LB
Cfb
Rbe
Fig.4. Switching times test circuit.
hFE
100
5V
10
1V
BU2525DF
Tj = 25 C
Tj = 125 C
1
0.1
Fig.5.
1
10
100
IC / A
Typical DC current gain. hFE = f (IC)
parameter VCE
1.2 VBESAT / V
Tj = 25 C
1.1
Tj = 125 C
1
BU2525AF
0.9
0.8
0.7
IC/IB=
3
0.6
4
0.5
5
0.4
0.1
1
10
IC / A
Fig.6. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
September 1997
3
Rev 1.200
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