Q67060-S6072-A101(2003) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

Q67060-S6072-A101
(Rev.:2003)

Smart Highside Power Switch

Infineon Technologies 

Data sheet BTS 6133 D

Input circuit (ESD protection)

V bb

V

ZD

Z,IN

V bIN

IN

I

IN

R bb

V IN

ESD-Zener diode: 67 V typ., max 15 mA;

Inductive and overvoltage output clamp

+ Vbb

VZ1

V ON

OUT

PROFET

VON is clamped to VON(Cl) = 42 V typ

Overvoltage protection of logic part

+ Vbb

Current sense output

Normal operation

Vbb Rbb

IIS,fault

ZD

V

Z,IS

R IN

IN

V

Z,IN

V

Z,IS

R bb

Logic

IS

PROFET

VOUT

IS

IIS

VIS

R

IS

VZ,IS = 67 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n

devices are connected in parallel). IS = IL/kilis can be

only driven by the internal circuit as long as

Vout - VIS > 5V. Therefore RIS should be less than

Vbb − 5V

7.5mA

.

Note: For large values of RIS the voltage VIS can reach

almost Vbb. See also overvoltage protection.

If you don't use the current sense output in your

application, you can leave it open.

R IS

RV

V Z,VIS

Signal GND

Rbb = 100 Ω typ., VZ,IN = VZ,IS = 67 V typ., RIS = 1 kΩ

nominal. Note that when overvoltage exceeds 67 V typ.

a voltage above 5V can occur between IS and GND, if

RV, VZ,VIS are not used.

Infineon Technologies AG

9 of 15

2003-Oct-01

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