BTS6123P Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

BTS6123P

Smart High-Side Power Switch PROFET One Channel, 10 mΩ

Infineon Technologies 

Smart High-Side Power Switch

BTS 6123P

Power Stages

4

Block Description and Electrical Characteristics

4.1

Power Stages

The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge

pump.

4.1.1 Input Circuit

Figure 4 shows the input circuit of the BTS 6123P. The current source to Vbb ensures

that the device switches off in case of open input pin. The zener diode protects the input

circuit against ESD pulses.

V

bIN

I

IN

I

IN

VIN

Rbb

Vbb

VZ,IN

Figure 4 Input Circuit

Input.emf

A high signal at the required external small signal transistor pulls the input pin to ground.

A logic supply current IIN is flowing and the power DMOS switches on with a dedicated

slope, which is optimized in terms of EMC emission.

Figure 5

IIN

VOUT

90%

50%

25%

10%

tON

dV/dtON

Switching a Load (resistive)

tOFF

t

dV/dtOFF

t

SwitchOn.emf

Data Sheet

10

V1.0, 2005-12-15

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