Q67060-S6953A3 Ver la hoja de datos (PDF) - Siemens AG

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Q67060-S6953A3

Smart Highside High Current Power Switch

Siemens AG 

Parameter and Conditions

at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified

Target Data Sheet BTS560

Symbol

Values

Unit

min typ max

Thermal overload trip temperature

Thermal hysteresis

Tjt

150

--

-- °C

∆Tjt

-- 10

-- K

Reverse Battery

Reverse battery voltage 15)

On-state resistance (Pins 1,5 to pin 3)

Tj = 25 °C:

Vbb = -12V, VIN = 0, IL = - tbd (>=20) A, RIS = 1 kΩTj =

150 °C:

Integrated resistor in Vbb line

-Vbb

RON(rev)

Rbb

--

-- 42 V

-- 3.7 tbd mΩ

0

0

-- tbd

-- Ω

Diagnostic Characteristics

Current sense ratio, static on-condition,

kILIS = IL : IIS, VON < 1.5 V16),

VIS <VOUT - 5 V, VbIN > 4.5 V

-40°C: kILIS

25°C:

150°C:

see diagram on page 11

IL = 150 A:

IL = 25 A:

IL = 12 A:

IL = 6 A:

IIN = 0, IIS=0(e.g. during deenergizing of inductive loads):

Sense current saturation

Current sense leakage current

IIN = 0, VIS = 0:

VIN = 0, VIS = 0, IL ≤ 0:

Current sense settling time17) after positive input

slope (90% of IIS static)

IL = 0 / tbd (>=20) A:

Current sense settling time17) after negative input

slope (10% of IIS static)

IL = tbd (>=20) / 0 A:

Current sense settling time17) after change of load

current (60% to 90%)

IL = 15 / tbd (>=20) A:

Overvoltage protection

Ibb = 15 mA

Tj =-40°C:

Tj = 25...+150°C:

IIS,lim

IIS(LL)

IIS(LH)

tson(IS)

tsoff(IS)

tslc(IS)

VbIS(Z)

-- 26 530 --

-- 25 430 --

-- 23 520 --

-40°C: +25°C: 150°C:

±4.5% ±4.2% ±4.0%

±8.9% ±7.5% ±6.1%

±15% ±12% ±9.0%

±46% ±36% ±24%

--

--

--

5.5

--

-- mA

--

-- 0.5 µA

--

2

--

-- tbd 500 µs

-- tbd 500 µs

-- tbd 500 µs

68

--

-- V

70 74

--

15) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load

(as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power

transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the

intrinsic drain-source diode. The temperature protection is not active during reverse current operation!

Increasing reverse battery voltage capability is simply possible as described on page 8.

16) If VON is higher, the sense current is no longer proportional to the load current due to sense current

saturation, see IIS,lim .

17) Not tested, specified by design.

Semiconductor Group

Page 5

1998-Jun-17

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